International SPAD Sensor Workshop (ISSW) 2020

Meet ams virtually at the ISSW 2020

 
This virtual workshop focuses on the study, modelling, design, fabrication, and characterization of SPAD sensors. It addresses researchers, practitioners and educators interested in SPADs, SPAD imagers, and associated applications.

ams Speaking Slot on Monday, June 8th
 

Session "Technology": 13:30-14:10 BST
Presentation title: 3D-Stacked SPAD in 40/45nm BSI Technology

Abstract: We present a Single Photon Avalanche Diode (SPAD) fabricated in a 3D stacked backside illumination (BSI) technology. Several SPAD layouts with a pitch of ~12.5um, but differing by the fill factor in the range of 25% to 57% are compared with respect to key performance parameters like breakdown voltage(VBD), dark count rate (DCR), photon detection efficiency (PDE), timing jitter, cross-talk and after pulsing probability. The best performing SPAD with a breakdown voltage of 17V achieves a DCR of 15cps and a PDE of 4.8% at 940nn when operated with an excess bias of 2.0V.

Speaker: Georg Roehrer, 
Principal Engineer Systems and Photonics R&D, ams AG

Georg Roehrer received the M.Sc. degree from the Technical University of Graz, Austria in 1999. He joined ams AG in 2000 and has made significant contributions in the field of bipolar transistors, Hall effect sensors, high voltage devices and SPADs. He is the author of over 30 patents in these fields.

Come and join ams at our speaking slot!