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BiCMOS and SiGe BiCMOS technologies

ams' BiCMOS and SiGe-BiCMOS processes are designed to support advanced RF design with highest performance and lowest process complexity.

High speed SiGe HBT transistors with lowest noise figures enable designs for operating frequencies up to 7GHz with current consumptions significant lower than comparable designs based on conventional CMOS RF processes. These advanced processes offer high-speed bipolar-transistors with excellent analog performance, such as high fmax and low noise, complementary MOS transistors, very low-parasitic linear capacitors, linear resistors and spiral inductors. The careful characterization and modeling of all active, passive, and parasitic devices of this process result in simulation models for different circuit simulators guarantees the optimum use of these new processes.

0.35µm SiGe-BiCMOS:

ams’ 0.35μm SiGe-BiCMOS process is based on the industry’s standard 0.35μm mixed-signal CMOS process with the extension of additional high performance analog oriented Si-Ge HBT transistor modules. This advanced RF-process offers high-speed HBT-transistors with excellent analog performance such as high fmax and low noise as well as complementary MOS transistors with the option of 5V I/O CMOS transistors. A full set of accurately modeled analog and RF devices implemented in ams’ leading edge design kit (hitkit) com-plements this high-performance process. It comprises devices such as highly linear precision capacitors (either as Poly / Poly or Metal / Metal versions), linear resistors, high quality va-ractors and thick Metal 4 spiral inductors. 


0.80µm BiCMOS: