The ams specialty CMOS process portfolio includes a 0.18µm, 0.35µm and a 0.80µm CMOS process family.
The ams C18 process is the base technology for ams’ advanced 0.18µm process family. The Mixed-Signal CMOS process C18 is equivalent to GlobalFoundries' industry proven foundry process technology CMOS7RF and offers highest integration density up to 152kGates/mm² at up to 6 levels of metal, supply voltages from 1.8V to 5.0V and ESD protection cells with up to 8kV HBM level.
ams´ 0.35µm CMOS process family has been transferred from TSMC and is fully compatible with TSMC 0.35µm mixed signal process. High density CMOS standard cell library optimized for synthesis and 3- and 4-layer routing guarantees high gate densities. Peripheral cell libraries are available for 3.3V and 5V with high driving capabilities and excellent ESD performance. Qualified digital macro blocks (RAM, diffusion programmable ROM and DPRAM) are available on request.
- 0.35µm CMOS process details (C35)
- 0.35µm Opto-CMOS process details (C35O)
- 0.35µm Technology Selection Guide (C35)
ams' mature 0.80µm CMOS process family provides analog/mixed performance at low process complexity.